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TIM1213-18L

MICROWAVE POWER GaAs FET

TIM1213-18L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-18L RF PERFORMANCE SPECIFI

TIM1213-18L Datasheet (484.42 KB)

Preview of TIM1213-18L PDF

Datasheet Details

Part number:

TIM1213-18L

Manufacturer:

Toshiba ↗

File Size:

484.42 KB

Description:

Microwave power gaas fet.

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TAGS

TIM1213-18L MICROWAVE POWER GaAs FET Toshiba

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