Datasheet Specifications
- Part number
- TIM1213-30L
- Manufacturer
- Toshiba ↗
- File Size
- 344.15 KB
- Datasheet
- TIM1213-30L-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET TIM1213-30L .
Features
* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS📁 Related Datasheet
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