ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN
G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION
IM3= -28dB
TIM1213-15L, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.
TIM1213-18L, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.
TIM1213-2L, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY.
TIM1213-8UL, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.
TIM1011-15L, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.
TIM1011-2L, Toshiba Semiconductor
..
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz.
TIM1011-4L, Toshiba Semiconductor
..
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA FEATURES
HIGH POWER P1dB=36.5dBm at 10.7GHz to 11..
TIM1011-4UL, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.
Stock and price
Toshiba America Electronic Components
Trans JFET NCH 15V 20000mA 3Pin AA03A (Alt: TIM1213-30L)
