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TIM1213-30L Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM1213-30L Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS

TIM1213-30L Datasheet (344.15 KB)

Preview of TIM1213-30L PDF

Datasheet Details

Part number:

TIM1213-30L

Manufacturer:

Toshiba ↗

File Size:

344.15 KB

Description:

Microwave power gaas fet.

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TAGS

TIM1213-30L MICROWAVE POWER GaAs FET Toshiba

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