TIM1213-15L Datasheet, Fet, Toshiba

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Part number:

TIM1213-15L

Manufacturer:

Toshiba ↗

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404.62kb

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📄 Datasheet

Description:

Microwave power gaas fet.

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📁 Related Datasheet

TIM1213-18L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.

TIM1213-2L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY.

TIM1213-30L - MICROWAVE POWER GaAs FET (Toshiba)
MICROWAVE POWER GaAs FET TIM1213-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN G1dB= 5.5d.

TIM1213-8UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD.

TIM1011-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.

TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
.. TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz.

TIM1011-4L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
.. MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11..

TIM1011-4UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.

TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY.

TIM1011-8L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
.. MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dB.