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TIM1213-15L MICROWAVE POWER GaAs FET

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Description

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Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.0dBm at 12.7GHz to 13.2GHz ・HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-15L RF PERFORMANCE SPECIFI

TIM1213-15L Distributors

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Toshiba TIM1213-15L-like datasheet