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TIM1213-8UL Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM1213-8UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-8UL RF PERFORMANCE SPECIFI

TIM1213-8UL Datasheet (468.86 KB)

Preview of TIM1213-8UL PDF

Datasheet Details

Part number:

TIM1213-8UL

Manufacturer:

Toshiba ↗

File Size:

468.86 KB

Description:

Microwave power gaas fet.

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TAGS

TIM1213-8UL MICROWAVE POWER GaAs FET Toshiba

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