Part number:
TIM1011-5L
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
276.23 KB
Description:
Microwave power gaas fet.
* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow
TIM1011-5L Datasheet (276.23 KB)
TIM1011-5L
Toshiba ↗ Semiconductor
276.23 KB
Microwave power gaas fet.
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