Part number:
TIM1011-5L
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
276.23 KB
Description:
Microwave power gaas fet.
TIM1011-5L_ToshibaSemiconductor.pdf
Datasheet Details
TIM1011-5L Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow
TIM1011-5L_ToshibaSemiconductor.pdf
Datasheet Details
TIM1011-5L
Toshiba ↗ Semiconductor
276.23 KB
Microwave power gaas fet.
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