Datasheet Specifications
- Part number
- TIM1011-5L
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 276.23 KB
- Datasheet
- TIM1011-5L_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point PowTIM1011-5L Distributors
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