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TIM1011-5L

MICROWAVE POWER GaAs FET

TIM1011-5L Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM1011-5L Datasheet (276.23 KB)

Preview of TIM1011-5L PDF

Datasheet Details

Part number:

TIM1011-5L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

276.23 KB

Description:

Microwave power gaas fet.

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TIM1011-5L MICROWAVE POWER GaAs FET Toshiba Semiconductor

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