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TIM1011-8UL

MICROWAVE POWER GaAs FET

TIM1011-8UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-8UL RF PERFORMANCE SPECIFICA

TIM1011-8UL Datasheet (277.11 KB)

Preview of TIM1011-8UL PDF

Datasheet Details

Part number:

TIM1011-8UL

Manufacturer:

Toshiba ↗

File Size:

277.11 KB

Description:

Microwave power gaas fet.

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TIM1011-8UL MICROWAVE POWER GaAs FET Toshiba

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