TIM1011-8UL - MICROWAVE POWER GaAs FET
TIM1011-8UL Features
* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 9.0dB at 10.7GHz to 11.7GHz ・LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 27.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-8UL RF PERFORMANCE SPECIFICA