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TIM1011-8UL Datasheet, Fet, Toshiba

✔ TIM1011-8UL Features

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Part number:

TIM1011-8UL

Manufacturer:

Toshiba ↗

File Size:

277.11kb

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📄 Datasheet

Description:

Microwave power gaas fet.

Datasheet Preview: TIM1011-8UL 📥 Download PDF (277.11kb)
Page 2 of TIM1011-8UL

📁 Related Datasheet

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.. MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dB.

TIM1011-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ・LOW INTERMOD.

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.. TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz.

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.. MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11..

TIM1011-4UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ・LOW INTERMOD.

TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ・HERMETICALLY.

TIM1112-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.0dBm at 11.7GHz to 12.7GHz ・HIGH GAIN G1dB= 6.0dB at 11.7GHz to 12.7GHz ・LOW INTERMOD.

TIM1112-4UL - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 11.7GHz to 12.7GHz ・HIGH GAIN G1dB= 9.5dB at 11.7GHz to 12.7GHz ・LOW INTERMOD.

TIM1213-15L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.0dBm at 12.7GHz to 13.2GHz ・HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ・LOW INTERMOD.

TIM1213-18L - MICROWAVE POWER GaAs FET (Toshiba)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ・HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ・LOW INTERMOD.

Stock and price

Toshiba America Electronic Components
RF FET Transistor N Channel 15 V 405 W 107 GHz 117 GHz 211C1B 3 Pins (Alt: TIM1011-8ULA)
EBV Elektronik
TIM1011-8ULA
0 In Stock
0
Unit Price : $0

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TIM1011-8UL MICROWAVE POWER GaAs FET Toshiba
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