Datasheet Specifications
- Part number
- TIM1011-15L
- Manufacturer
- Toshiba ↗
- File Size
- 400.74 KB
- Datasheet
- TIM1011-15L-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-15L RF PERFORMANCE SPECIFITIM1011-15L Distributors
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