Part number:
TIM1011-8L
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
169.27 KB
Description:
Microwave power gaas fet.
TIM1011-8L_ToshibaSemiconductor.pdf
Datasheet Details
TIM1011-8L Features
* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
* HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
* HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMA
TIM1011-8L_ToshibaSemiconductor.pdf
Datasheet Details
TIM1011-8L
Toshiba ↗ Semiconductor
169.27 KB
Microwave power gaas fet.
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TIM1011-8L Distributor