TIM1011-8L Datasheet, Fet, Toshiba Semiconductor

TIM1011-8L Features

• Fet
• LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
• HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
• HIGH GAIN G1dB=6.0 dB at

PDF File Details

Part number:

TIM1011-8L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.27kb

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📄 Datasheet

Description:

Microwave power gaas fet.

TIM1011-8L Application

• Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

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TIM1011-8L

Toshiba Semiconductor

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