TIM1011-8L - MICROWAVE POWER GaAs FET
TIM1011-8L Features
* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
* HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
* HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMA
