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TIM1011-8L

MICROWAVE POWER GaAs FET

TIM1011-8L Features

* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level

* HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz

* HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz

* BROAD BAND INTERNALLY MATCHED FET

* HERMETICALLY SEALED PACKAGE RF PERFORMA

TIM1011-8L Datasheet (169.27 KB)

Preview of TIM1011-8L PDF

Datasheet Details

Part number:

TIM1011-8L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.27 KB

Description:

Microwave power gaas fet.

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TAGS

TIM1011-8L MICROWAVE POWER GaAs FET Toshiba Semiconductor

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