Datasheet4U Logo Datasheet4U.com

TIM1414-18L-252 MICROWAVE POWER GaAs FET

TIM1414-18L-252 Description

MICROWAVE POWER GaAs FET TIM1414-18L-252 .

TIM1414-18L-252 Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min. ) at Pout= 36dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTE

📥 Download Datasheet

Preview of TIM1414-18L-252 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TIM1414-5-252 - POWER GAAS FET (Toshiba Semiconductor)
  • TIM1414-7 - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-4L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-8L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM-LC - GPS Receiver (uBlox)
  • TIM-LH - GPS Receiver Module (uBlox)

📌 All Tags

MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1414-18L-252-like datasheet