TIM0910-8 Datasheet, Fet, Toshiba

✔ TIM0910-8 Features

･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 6.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWE

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Part number:

TIM0910-8

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Toshiba ↗

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📄 Datasheet

Description:

Microwave power gaas fet.

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Toshiba America Electronic Components

Trans RF FET NCH 15V 104A 211C1B (Alt: TIM0910-8)

EBV Elektronik

TIM0910-8

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TIM0910-8 MICROWAVE POWER GaAs FET Toshiba