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TIM0910-15L Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM0910-15L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-15L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM0910-15L Datasheet (401.68 KB)

Preview of TIM0910-15L PDF

Datasheet Details

Part number:

TIM0910-15L

Manufacturer:

Toshiba ↗

File Size:

401.68 KB

Description:

Microwave power gaas fet.

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TIM0910-15L MICROWAVE POWER GaAs FET Toshiba

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