･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWE
TIM0910-30L, Toshiba
MICROWAVE POWER GaAs FET
TIM0910-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB.
TIM0910-4, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.5dB at 9.5GHz to 10.5GHz ･HERMETICALLY S.
TIM0910-8, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 6.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY S.
TIM1011-15L, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD.
TIM1011-2L, Toshiba Semiconductor
..
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz.
TIM1011-4L, Toshiba Semiconductor
..
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA FEATURES
HIGH POWER P1dB=36.5dBm at 10.7GHz to 11..
