Toshiba
TIM1011-15L - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMOD
Rating:
1
★
(4 votes)
