Toshiba
TIM1112-4UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN
G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMOD
Rating:
1
★
(2 votes)
