TIM1213-18L (Toshiba)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD
(10 views)
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
MICROWAVE POWER GaAs FET
TIM1213-18L Distributor
