Toshiba
TIM1213-2L - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY
Rating:
1
★
(2 votes)
