TIM1213-2L (Toshiba)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
MICROWAVE POWER GaAs FET
TIM1213-2L Distributor
