Toshiba
TIM1213-8UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba
TIM1213-8UL Distributor
