Toshiba
TIM1213-8UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMOD
Rating:
1
★
(2 votes)
