Toshiba
TIM1314-8UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN
G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERM
Rating:
1
★
(4 votes)
