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TIM1314-8UL

MICROWAVE POWER GaAs FET

TIM1314-8UL Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.0dBm at 13.75GHz to 14.5GHz ・HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1314-8UL RF PERFORMANCE SPECI

TIM1314-8UL Datasheet (477.50 KB)

Preview of TIM1314-8UL PDF

Datasheet Details

Part number:

TIM1314-8UL

Manufacturer:

Toshiba ↗

File Size:

477.50 KB

Description:

Microwave power gaas fet.

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TAGS

TIM1314-8UL MICROWAVE POWER GaAs FET Toshiba

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