TIM1314-8UL Datasheet - Toshiba

TIM1314-8UL, MICROWAVE POWER GaAs FET

Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1314-8UL RF PERFORMANCE SPECI

TIM1314-8UL-Toshiba.pdf