TIM1314-9L Datasheet - Toshiba

TIM1314-9L, MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET TIM1314-9L

Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTER

TIM1314-9L-Toshiba.pdf