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TIM1314-9L MICROWAVE POWER GaAs FET

TIM1314-9L Description

MICROWAVE POWER GaAs FET TIM1314-9L .

TIM1314-9L Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min. ) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTER

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1314-9L-like datasheet