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TIM1314-9L

MICROWAVE POWER GaAs FET

TIM1314-9L Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTER

TIM1314-9L Datasheet (395.46 KB)

Preview of TIM1314-9L PDF

Datasheet Details

Part number:

TIM1314-9L

Manufacturer:

Toshiba ↗

File Size:

395.46 KB

Description:

Microwave power gaas fet.

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TAGS

TIM1314-9L MICROWAVE POWER GaAs FET Toshiba

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