TIM1314-30L Datasheet - Toshiba

TIM1314-30L, MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET TIM1314-30L

Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 5.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTE

TIM1314-30L-Toshiba.pdf