Toshiba
TIM5359-16UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 10.0dB at 5.3GHz to 5.9GHz ･HERMETICALLY SE
Rating:
1
★
(4 votes)
