TIM5359-45SL (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULAT
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