TIM5359-4UL (Toshiba)
MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 10.5dB at 5.3GHz to 5.9GHz ･HERMETICALLY SE
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
MICROWAVE POWER GaAs FET
TIM5359-4UL Distributor
