Toshiba
TIM5359-4UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 10.5dB at 5.3GHz to 5.9GHz ･HERMETICALLY SE
Rating:
1
★
(2 votes)
