MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋB.
Toshiba Semiconductor
TIM5964-16UL - MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0d.