TIM5964-35SLA Datasheet | Specifications & PDF Download

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULAT

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MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 „ LOW INTERMODULATION DISTORTION IM3

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MICROWAVE POWER GaAs FET TIM5964-35SLA-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB

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