FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba Semiconductor
TIM5964-35SLA-251 - MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 LOW INTERMODULATION DISTORTION IM3.
Toshiba
TIM5964-35SLA-422 - MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET TIM5964-35SLA-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB.
Toshiba Semiconductor
TIM5964-35SLA - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULAT.