FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba Semiconductor
TIM5964-60SL - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULAT.
Toshiba
TIM5964-60SL-422 - MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET TIM5964-60SL-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB=.
