
TIM5964-60SL (Toshiba Semiconductor)
MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 48.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 8.5dB at 5.9GHz to 6.4GHz ・LOW INTERMODULAT
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