TIM5964-6UL Datasheet | Specifications & PDF Download

MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0d

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MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GH

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