FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･H.
Toshiba Semiconductor
TIM6472-12UL - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 41.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULAT.
