TIM6472-12UL
Toshiba ↗ Semiconductor
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Microwave power gaas fet.
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TIM6472-16UL - MICROWAVE POWER GaAs FET
(Toshiba)
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ・HERMETICALLY SEA.
TIM6472-30SL - MICROWAVE POWER GaAs FET
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TIM6472-30UL - MICROWAVE POWER GaAs FET
(Toshiba)
MICROWAVE POWER GaAs FET
TIM6472-30UL
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB.
TIM6472-35SL - MICROWAVE POWER GaAs FET
(Toshiba Semiconductor)
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 8.0dB at 6.4GHz to 7.2GHz ・LOW INTERMODULAT.
TIM6472-45SL - MICROWAVE POWER GaAs FET
(Toshiba)
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 46.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 8.0dB at 6.4GHz to 7.2GHz ・LOW INTERMODULAT.
TIM6472-4UL - MICROWAVE POWER GaAs FET
(Toshiba)
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ・HERMETICALLY SEA.
TIM6472-60SL - MICROWAVE POWER GaAs FET
(Toshiba)
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 48.0dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 7.5dB at 6.4GHz to 7.2GHz ・LOW INTERMODULAT.
TIM6472-8UL - MICROWAVE POWER GaAs FET
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM6472-8UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2.
TIM-LC - GPS Receiver
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Datasheet pdf - http://..net/
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your position is our focus
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TIM-LH - GPS Receiver Module
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TIM-LH
SuperSense GPS Receiver Module ® ANTARIS Positioning Engine
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