Datasheet4U Logo Datasheet4U.com

TIM6472-12UL MICROWAVE POWER GaAs FET

📥 Download Datasheet  Datasheet Preview Page 1

Description

.

📥 Download Datasheet

Preview of TIM6472-12UL PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 41.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ・LOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-12UL RF PERFORMANCE SPECIFICAT

TIM6472-12UL Distributors

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor TIM6472-12UL-like datasheet