TIM6472-12UL Datasheet, Fet, Toshiba Semiconductor

TIM6472-12UL Features

  • Fet ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 41.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ・LOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm

PDF File Details

Part number:

TIM6472-12UL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

365.86kb

Download:

📄 Datasheet

Description:

Microwave power gaas fet.

Datasheet Preview: TIM6472-12UL 📥 Download PDF (365.86kb)
Page 2 of TIM6472-12UL Page 3 of TIM6472-12UL

TAGS

TIM6472-12UL
MICROWAVE
POWER
GaAs
FET
Toshiba Semiconductor

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Toshiba America Electronic Components
MICROWAVE POWER GaAs FET 15V 10A 3Pin 216G1B (Alt: TIM6472-12UL)
EBV Elektronik
TIM6472-12UL
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