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TIM6472-60SL

MICROWAVE POWER GaAs FET

TIM6472-60SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 7.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-60SL RF PERFORMANCE SPECIFICAT

TIM6472-60SL Datasheet (418.04 KB)

Preview of TIM6472-60SL PDF

Datasheet Details

Part number:

TIM6472-60SL

Manufacturer:

Toshiba ↗

File Size:

418.04 KB

Description:

Microwave power gaas fet.

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TAGS

TIM6472-60SL MICROWAVE POWER GaAs FET Toshiba

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