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TIM6472-45SL MICROWAVE POWER GaAs FET

TIM6472-45SL Description

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TIM6472-45SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-45SL RF PERFORMANCE SPECIFICAT

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM6472-45SL-like datasheet