Datasheet Specifications
- Part number
- TIM6472-45SL
- Manufacturer
- Toshiba ↗
- File Size
- 430.29 KB
- Datasheet
- TIM6472-45SL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-45SL RF PERFORMANCE SPECIFICATTIM6472-45SL Distributors
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