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TIM6472-4UL MICROWAVE POWER GaAs FET

TIM6472-4UL Description

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TIM6472-4UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM6472-4UL-like datasheet