Datasheet Specifications
- Part number
- TIM6472-4UL
- Manufacturer
- Toshiba ↗
- File Size
- 233.69 KB
- Datasheet
- TIM6472-4UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point PowerTIM6472-4UL Distributors
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