Datasheet Specifications
- Part number
- TIM6472-35SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 407.96 KB
- Datasheet
- TIM6472-35SL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-35SL RF PERFORMANCE SPECIFICATTIM6472-35SL Distributors
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