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TIM6472-35SL Datasheet - Toshiba Semiconductor

TIM6472-35SL_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TIM6472-35SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

407.96 KB

Description:

Microwave power gaas fet.

TIM6472-35SL, MICROWAVE POWER GaAs FET

TIM6472-35SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-35SL RF PERFORMANCE SPECIFICAT

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📌 All Tags

TIM6472-35SL MICROWAVE POWER GaAs FET Toshiba Semiconductor
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