Part number:
TIM6472-35SL
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
407.96 KB
Description:
Microwave power gaas fet.
TIM6472-35SL Datasheet (407.96 KB)
Datasheet Details
TIM6472-35SL Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-35SL RF PERFORMANCE SPECIFICAT
TIM6472-35SL Datasheet (407.96 KB)
Datasheet Details
TIM6472-35SL
Toshiba ↗ Semiconductor
407.96 KB
Microwave power gaas fet.
📁 Related Datasheet
TIM6472-30SL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM6472-30UL MICROWAVE POWER GaAs FET (Toshiba)
TIM6472-12UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM6472-16UL MICROWAVE POWER GaAs FET (Toshiba)
TIM6472-45SL MICROWAVE POWER GaAs FET (Toshiba)
TIM6472-4UL MICROWAVE POWER GaAs FET (Toshiba)
TIM6472-60SL MICROWAVE POWER GaAs FET (Toshiba)
TIM6472-8UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM6472-35SL Distributor