TIM6472-35SL Datasheet, Fet, Toshiba Semiconductor

TIM6472-35SL Features

• Fet ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm

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Part number:

TIM6472-35SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

407.96kb

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📄 Datasheet

Description:

Microwave power gaas fet.

TAGS

TIM6472-35SL

Toshiba Semiconductor

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