Toshiba
TIM6472-45SL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 46.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULAT
Rating:
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