Toshiba
TIM6472-4UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEA
Rating:
1
★
(3 votes)
