Toshiba
TIM6472-60SL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 7.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULAT
Rating:
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