Toshiba
TIM7179-30UL - MICROWAVE POWER GaAs FET
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN
G1dB= 8.5dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEA
Rating:
1
★
(3 votes)
