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TIM7179-30UL MICROWAVE POWER GaAs FET

TIM7179-30UL Description

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TIM7179-30UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Powe

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7179-30UL-like datasheet