Datasheet4U Logo Datasheet4U.com

TIM7785-16UL Datasheet - Toshiba Semiconductor

TIM7785-16UL MICROWAVE POWER GaAs FET

TIM7785-16UL Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Powe

TIM7785-16UL Datasheet (366.60 KB)

Preview of TIM7785-16UL PDF
TIM7785-16UL Datasheet Preview Page 2 TIM7785-16UL Datasheet Preview Page 3

Datasheet Details

Part number:

TIM7785-16UL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

366.60 KB

Description:

Microwave power gaas fet.

📁 Related Datasheet

TIM7785-16 MICROWAVE POWER GAAS FET (Toshiba Semiconductor)

TIM7785-12UL MICROWAVE POWER GaAs FET (Toshiba)

TIM7785-25UL MICROWAVE POWER GaAs FET (Toshiba)

TIM7785-30UL MICROWAVE POWER GaAs FET (Toshiba)

TIM7785-35SL MICROWAVE POWER GaAs FET (Toshiba)

TIM7785-4UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

TIM7785-60SL MICROWAVE POWER GaAs FET (Toshiba)

TIM7785-60ULA MICROWAVE POWER GaAs FET (Toshiba)

TAGS

TIM7785-16UL MICROWAVE POWER GaAs FET Toshiba Semiconductor

TIM7785-16UL Distributor