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TIM7785-30UL MICROWAVE POWER GaAs FET

TIM7785-30UL Description

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TIM7785-30UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3(MIN. )= -44dBc at Pout= 34.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-30UL RF PERFORMANCE SPEC

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7785-30UL-like datasheet