Datasheet Specifications
- Part number
- TIM7785-30UL
- Manufacturer
- Toshiba ↗
- File Size
- 462.95 KB
- Datasheet
- TIM7785-30UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3(MIN. )= -44dBc at Pout= 34.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-30UL RF PERFORMANCE SPECTIM7785-30UL Distributors
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