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TIM7785-30UL Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM7785-30UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3(MIN.)= -44dBc at Pout= 34.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-30UL RF PERFORMANCE SPEC

TIM7785-30UL Datasheet (462.95 KB)

Preview of TIM7785-30UL PDF

Datasheet Details

Part number:

TIM7785-30UL

Manufacturer:

Toshiba ↗

File Size:

462.95 KB

Description:

Microwave power gaas fet.

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TAGS

TIM7785-30UL MICROWAVE POWER GaAs FET Toshiba

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