| Image | Manufacturer | Part Number | B2B mpn | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|---|
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Toshiba America Electronic Components | TIM7785-30UL | TIM7785-30UL | RF Components - Trays (Alt: TIM7785-30UL) | Avnet Americas | 0 | 0 |
$0
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TIM7785-30UL
462.95 KB
📄 Download TIM7785-30UL Datasheet PDF
Microwave power gaas fet.
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN.
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION
IM3(MIN.)= -44dBc at Pout= 34.0dBm .
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Toshiba America Electronic Components
|
| TIM7785-30UL |
|
RF Components (Alt: TIM7785-30UL)
|
| EBV Elektronik |
| 0 In Stock |
|
Unit Price : $0
|
| 🛒 Buy Now |
