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TIM7785-4UL MICROWAVE POWER GaAs FET

TIM7785-4UL Description

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TIM7785-4UL Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

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Toshiba Semiconductor TIM7785-4UL-like datasheet