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TIM7785-35SL MICROWAVE POWER GaAs FET

TIM7785-35SL Description

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TIM7785-35SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-35SL RF PERFORMANCE SPECIFICAT

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7785-35SL-like datasheet