Datasheet Specifications
- Part number
- TIM7785-35SL
- Manufacturer
- Toshiba ↗
- File Size
- 416.26 KB
- Datasheet
- TIM7785-35SL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-35SL RF PERFORMANCE SPECIFICATTIM7785-35SL Distributors
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