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TIM7785-35SL Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM7785-35SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-35SL RF PERFORMANCE SPECIFICAT

TIM7785-35SL Datasheet (416.26 KB)

Preview of TIM7785-35SL PDF

Datasheet Details

Part number:

TIM7785-35SL

Manufacturer:

Toshiba ↗

File Size:

416.26 KB

Description:

Microwave power gaas fet.

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TIM7785-35SL MICROWAVE POWER GaAs FET Toshiba

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