Datasheet Specifications
- Part number
- TIM7785-60SL
- Manufacturer
- Toshiba ↗
- File Size
- 318.65 KB
- Datasheet
- TIM7785-60SL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET TIM7785-60SL .
Features
* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN. )= -45dBc at Pout= 36.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTTIM7785-60SL Distributors
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