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TIM7785-60SL MICROWAVE POWER GaAs FET

TIM7785-60SL Description

MICROWAVE POWER GaAs FET TIM7785-60SL .

TIM7785-60SL Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN. )= -45dBc at Pout= 36.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERIST

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7785-60SL-like datasheet