ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc at
TIM7785-12UL, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 41.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULAT.
TIM7785-16UL, Toshiba Semiconductor
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEA.
TIM7785-30UL, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULAT.
TIM7785-35SL, Toshiba
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULAT.
TIM7785-4UL, Toshiba Semiconductor
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEA.
TIM7785-60SL, Toshiba
MICROWAVE POWER GaAs FET
TIM7785-60SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 7.5dB.
TIM7785-60ULA, Toshiba
MICROWAVE POWER GaAs FET
TIM7785-60ULA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 7.5d.
