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TIM7785-12UL Datasheet - Toshiba

MICROWAVE POWER GaAs FET

TIM7785-12UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 41.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-12UL RF PERFORMANCE SPECIFICAT

TIM7785-12UL Datasheet (365.89 KB)

Preview of TIM7785-12UL PDF

Datasheet Details

Part number:

TIM7785-12UL

Manufacturer:

Toshiba ↗

File Size:

365.89 KB

Description:

Microwave power gaas fet.

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TAGS

TIM7785-12UL MICROWAVE POWER GaAs FET Toshiba

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