Part number:
TIM7785-8SL
Manufacturer:
File Size:
319.66 KB
Description:
Microwave power gaas fet.
TIM7785-8SL Datasheet (319.66 KB)
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICAT
TIM7785-8SL Datasheet (319.66 KB)
TIM7785-8SL
319.66 KB
Microwave power gaas fet.
📁 Related Datasheet
TIM7785-8UL MICROWAVE POWER GaAs FET (Toshiba)
TIM7785-12UL MICROWAVE POWER GaAs FET (Toshiba)
TIM7785-16 MICROWAVE POWER GAAS FET (Toshiba Semiconductor)
TIM7785-16UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM7785-25UL MICROWAVE POWER GaAs FET (Toshiba)
TIM7785-30UL MICROWAVE POWER GaAs FET (Toshiba)
TIM7785-35SL MICROWAVE POWER GaAs FET (Toshiba)
TIM7785-4UL MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
TIM7785-60SL MICROWAVE POWER GaAs FET (Toshiba)
TIM7785-60ULA MICROWAVE POWER GaAs FET (Toshiba)
