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TIM7785-8SL MICROWAVE POWER GaAs FET

TIM7785-8SL Description

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TIM7785-8SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICAT

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7785-8SL-like datasheet