TIM7785-8SL Datasheet - Toshiba

TIM7785-8SL, MICROWAVE POWER GaAs FET

Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICAT

TIM7785-8SL-Toshiba.pdf