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TIM7785-8UL

MICROWAVE POWER GaAs FET

TIM7785-8UL Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-8UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

TIM7785-8UL Datasheet (234.16 KB)

Preview of TIM7785-8UL PDF

Datasheet Details

Part number:

TIM7785-8UL

Manufacturer:

Toshiba ↗

File Size:

234.16 KB

Description:

Microwave power gaas fet.

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TAGS

TIM7785-8UL MICROWAVE POWER GaAs FET Toshiba

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