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TIM7785-8UL MICROWAVE POWER GaAs FET

TIM7785-8UL Description

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TIM7785-8UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-8UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7785-8UL-like datasheet