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TIM7179-6UL MICROWAVE POWER GaAs FET

TIM7179-6UL Description

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TIM7179-6UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 38.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-6UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7179-6UL-like datasheet