TIM7179-45SL Datasheet - Toshiba

TIM7179-45SL, MICROWAVE POWER GaAs FET

Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 6.5dB at 7.1GHz to 7.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-45SL RF PERFORMANCE SPECIFICAT

TIM7179-45SL-Toshiba.pdf