Datasheet4U Logo Datasheet4U.com

TIM7179-8UL MICROWAVE POWER GaAs FET

TIM7179-8UL Description

.

TIM7179-8UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-8UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

📥 Download Datasheet

Preview of TIM7179-8UL PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TIM7785-16 - MICROWAVE POWER GAAS FET (Toshiba Semiconductor)
  • TIM7785-16UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM7785-4UL - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM-LC - GPS Receiver (uBlox)
  • TIM-LH - GPS Receiver Module (uBlox)
  • TIM1011-2L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-4L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)
  • TIM1011-5L - MICROWAVE POWER GaAs FET (Toshiba Semiconductor)

📌 All Tags

MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM7179-8UL-like datasheet